| 摘要 |
PURPOSE:To selectively deposit a Ge layer successively by a method wherein, after a treatment has been performed using the gas composed of Ge and H, layers are processed with the gas composed of Ge and halogen, and H2 gas. CONSTITUTION:After the first Ge thin layer has been formed by performing only a simple cleaning of a substrate using hydrofluoric acid or by performing a process using the GeH4 gas with which the Ge layer can be selectively formed, the second Ge layer is formed on the first Ge layer by performing a process using GeCl4 gas and H2 gas. To be more precise, said layers are placed in a CVD (chemical vapor deposition) reaction furnace in which GeH4 gas, GeCl4 gas and H2 gas can be introduced, a treatment is performed at the substrate temperature of 450 deg.C or below in a GeH4 gas atmosphere, and the first Ge layer 13 is formed on the exposed surface only of an Si substrate 11. Subsequently, the second Ge layer 14 is formed on the surface of the first Ge layer 13 by peforming a treatment in the atmosphere of GeCl4 gas and H2 gas.
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