| 摘要 |
PURPOSE:To obtain a thin film transistor (TFT) having an a-Si film, with which a TFT active matrix of large area can be formed easily, as a semiconductor film by a method wherein the a-Si film with which a channel will be formed is formed in two-layer structure, and the activation energy of the a-Si film on the side of a gate insulating film is made smaller than that of the a-Si film located on the opposite side. CONSTITUTION:A gate electrode 4, an insulating film 6, an amorphous semiconductor thin film (a-Si film) 50 having silicon as the main ingredient, a source electrode 2, and a drain electrode 3 are arranged on a semiconductor 1 having at least an insulated surface. The a-Si film 50 of the above-mentioned thin film transistor is formed in double-layer structure, and the activation energy of conductivity of the a-Si film 51 located on the side where the film 51 comes in contact with an insulating film 6 is made smaller than that of the other a-Si film 52. For example, the content of H2 of the a-Si film 51 on the side where it comes in contact with the gate insulating film 6 is made smaller than that of the a-Si film 52 on the reverse side of the gate insulating film 6, and the activation energy is formed at 0.6eV. Also, the content of H2 of the a-Si film 52 located on the reverse side of the gate insulating film 6 is made greater than that of the a-Si film 51 located on the side where it comes in contact with the gate insulating film 6, and the activation energy is formed at 0.8eV. |
