MANUFACTURE OF PHOTOELECTRIC CONVERTER

摘要

PURPOSE:To convert light in a more wider wavelength region into electricity, by forming an I-type non-single crystal semiconductor in a second non-single crystal semiconductor by using an electronic cyclotron resonating method. CONSTITUTION:A first photoelectric converter 10 located on the side of incident light 100 is composed of a first light transmitting electrode 2 on a light transmitting substrate 1; a non-single crystal semiconductor 3, which has a P-I-N junction generating photovoltaic force by the projection of light; and a light transmitting back electrode 4. Light 100' on the long wavelength side, which has transmitted through the first photoelectric converter 10, reaches a second photoelectric converter 10' is through a transparent medium 5. The second photoelectric converter 10' is composed of a light transmitting fourth electrode 4'; a second non-single crystal semiconductor 3' having a P-I-N or N-I-P junction, which generates a photovoltaic force by the projection of light; and a third back surface electrode 2'. The I-type non-single crystal semiconductor of the second electrode 2'. The I-type non-single crystal semiconductor of the second non-single crystal semiconductor 3' is manufactured by using an ECR PCVD method.