| 摘要 |
PURPOSE:To contrive the reduction in the working hours by a method wherein, in case a fine wiring is formed on a substrate by an additive process, the etching and inspection and correction are executed in the same vacuum exhaustion process. CONSTITUTION:A sample 12a having a base metal (thin metal film) 2 provided with an etching mask of a wiring conductor 3 plated selectively in the desired pattern is placed on a bed 13a, a high vacuum chamber 10 is evacuated and the bed is transferred to a position 13b by a control part 13. Ar gas is introduced 9, accelerated 18 by operating an ion gun 17, neutralized 19 at a moderate voltage and projected on the sample 12b as Ar molecules, and the sample is etched for the prescribed hour. The bed is returned to the position 13a, the wiring pattern 3 is collated with the standard information by a scanning type electron microscope and the results are stored 20b. In case there exists a defect, the bed is transferred to a position 13c. The storage 20b is read out and if the defect is a short-circuit, Ar gas is introduced 36, the shorted faulty place is etched away with an Ar molecular beam and if the defect is an open circuit, the an Ar molecular beam and the sputtered metal atoms are deposited on the faulty part through an aperture 37 to correct. Since the faulty parts are corrected in the same exhaustion process, the process is shortened.
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