发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To raise the cooling effect of LSI chips by a method wherein the ceramic multilayer wiring substrate and the block are integrally formed in one body in a state that the protruded parts of heat-radiating fins are fitted into the holes of the ceramic multilayer substrate and the semiconductor elements are mounted on the protruded parts. CONSTITUTION:Multilayer wirings 2 are arranged in the ceramics of a ceramic multilayer substrate 1 and holes are bored in parts of the surface of the ceramic multilayer substrate 1, whereon LSI chips 3 are mounted. A block 4 with a good thermal conductivity is provided with protruded parts 7 to fit into the holes of the ceramic multilayer substrate 1 and is integrally formed in one body with fins 8 provided on the back surface thereof, the ceramic multilayer substrate 1 and the block 4 are integrally formed in one body in a state that the protruded parts 7 are fitted into the holes of the ceramic multilayer substrate 1 and the LSI chips 3 are mounted on the protruded parts 7 of the block 4. The heat generated in the LSI chips 3 conducts to the protruded parts 7 with a high thermal conductivity and the block 4 with a good thermal conductivity and is radiated from the fins 8.
申请公布号 JPS61212045(A) 申请公布日期 1986.09.20
申请号 JP19850052241 申请日期 1985.03.18
申请人 HITACHI LTD 发明人 FUJITA TAKESHI;ISHIHARA SHOSAKU;KUROKI TAKASHI;TODA AKIZO
分类号 H01L23/34;H01L23/36;H01L23/538;H05K1/02;H05K1/03 主分类号 H01L23/34
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