发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remarkably improve the heat-dissipating property and the electric characteristics, by setting the thickness of a flame-sprayed ceramic layer according to the characteristics of a semiconductor element disposed directly on the layer. CONSTITUTION:A ceramic layer 31 is flame sprayed on a substrate such that the ceramic layer 31 has locally different thicknesses to form an uneven surface. Semiconductor elements 32 and 33 having characteristics suitable for the respective thicknesses are mounted on the flame sprayed ceramic layer 31 through a flame sprayed copper layer 34 and a solder layer 35 in that order. For example, if the semiconductor element 32 has a large current capacitance and is required to decrease its heat dissipation, it is mounted on the thinner region of the ceramic layer 31, and if the semiconductor element 33 has a higher dielectric resistance, it is mounted on the thicker region of the ceramic layer 31.
申请公布号 JPS61139047(A) 申请公布日期 1986.06.26
申请号 JP19840261071 申请日期 1984.12.11
申请人 TOSHIBA CORP 发明人 OMORI KAZUSHI;SEKIBA TOSHINOBU
分类号 H01L23/13;H01L21/52;H01L21/58;H01L23/367 主分类号 H01L23/13
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