| 摘要 |
PURPOSE:A resist material having excellent dry etchability, high sensitivity to electron beams and good resolution, comprising a polymer having specified fundamental units in the molecular skeleton. CONSTITUTION:A compound of formula III (wherein R1-3 are each H or a 1-6C hydrocarbon residue) obtained by conducting Diels-Alder reaction between (methyl)cyclopentadiene and a compound of formula I or II (wherein R4 is a 1-20C organic residue) is copolymerized with SO2 at -100-100 deg.C in the presence of a radical catalyst to obtain a resist material comprising a polymer of an average MW of 10,000-1,000,000, having fundamental units of formula IV in the molecular skeleton. A solution obtained by dissolving 3-40wt% mixture comprising this resist material and 0-50wt% organic material (e.g., epoxy resin) in a solvent (e.g., chloroform) is applied to a substrate, cured by heating to 100- 200 deg.C, exposed by irradiation with electron beams and developed with a developer (e.g., chloroform/methanol mixture). |
