| 摘要 |
PURPOSE:To reduce an impact to a semiconductor substrate according to ultraviolet light at manufacture of a semiconductor device by a method wherein a resist film is irradiated directly by ultraviolet light of long wavelength, and the film is made as not to be irradiated directly by ultraviolet light of short wavelength. CONSTITUTION:Light emitted from a light source 1 enters into a first and a second ultraviolet mirrors 5, 6 through a condenser 2, an aperture 3 and a collimeter 4. The mirror 5 reflects ultraviolet light of wavelength of 270nm or less, and the mirror 6 reflects light of 1mum or less. Accordingly, light reflected by the mirror 5 forms oxygen radicals efficiently. Light reflected by the mirror 6 cuts bonding of a resist film 10B. |
