| 摘要 |
<p>PURPOSE:To obtain a small-sized image sensor which can be manufactured through small number of steps inexpensively by sealing a semiconductor image sensor element with transparent resin. CONSTITUTION:A color filter 12 is formed on the surface of an image sensor element 11, a silicon nitrided film 12 is formed by a normal temperature photo CVD method on the surface of the film 12, the element is then associated with a metal frame 14, and sealed with a transparent resin 15. As a result, a small- sized image sensor having a light transmitting function of the image sensor, good moisture resistance and low cost can be obtained.</p> |
