| 摘要 |
<p>An insulating substrate of a thin-film integrated device is provided with thin-film elements, such as a thin-film capacitor, a thin-film field-effect transistor and a thin-film electroluminescence element, which each employ an insulating film (3, 7, 13, 15, 16) as one of the constituent elements thereof. The insulating film is constituted by a sputtered composite oxide film of which tantalum and aluminium are its main components. Since a sputtered composite oxide film has the advantage of a large specific inductivity and dielectric breakdown field strength and a small leakage current, its application to these thin-film elements makes it possible to improve the operating characteristics thereof and improve the overall reliability. </p> |
