发明名称 |
SEMICONDUCTOR MEMORY MANUFACTURE |
摘要 |
A method of fabricating an array of high capacity memory cells comprises patterning a semiconductor surface to form memory cell areas; covering the memory cell areas with insulator; forming an ion layer of first conductivity type throughout the insulator; forming an ion layer of second conductivity type throughout the semiconductor surface; forming a first conductive pattern over the insulating layer to form a storage gate and to define a storage region extending to an isolation region and to define a transfer region spaced from the isolation region by the storage region; removing ions of first conductivity type from the portion of insulator above the transfer region and from other active areas; removing ions of second conductivity type from the transfer region and other active areas; diffusing ions of first conductivity type from the insulating layer to the storage region to produce in the storage region a shallow ion layer of first conductivity type and a deep ion layer of second conductivity type; and forming a second conductivity pattern over the transfer region to define a bit line region spaced from the storage region by a portion of the transfer region and to produce a transfer gate overlying the transfer region portion and also insulated from and partially overlying the storage gate. |
申请公布号 |
GB2087646(B) |
申请公布日期 |
1984.06.13 |
申请号 |
GB19810034228 |
申请日期 |
1981.11.13 |
申请人 |
PHILIPS NV |
发明人 |
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分类号 |
H01L27/10;H01L21/265;H01L21/768;H01L21/8242;H01L23/522;H01L27/108;H01L29/78;(IPC1-7):01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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