发明名称 SUBSTRATE FOR MICROWAVE CIRCUIT AND ITS MANUFACTURE
摘要 The substrate is formed by a plate of boron nitride having a composition of 42% B, 53.5% N2, containing between 1.5 and 2.5% O2, and 1.5% Ca. The surface is increased in hardness and made non-friable by deposition of a glass film to a depth within the range of 10 to 15 microns. This deposit permits surface metallization and ensures cohesion of the boron nitride grains.
申请公布号 JPS58212940(A) 申请公布日期 1983.12.10
申请号 JP19830066346 申请日期 1983.04.16
申请人 THOMSON CSF 发明人 JIIN KURAUDE RESUNII;PIEERU ROSETSUTO;JIIN DOEN
分类号 H01P3/08;B32B9/04;B32B15/04;C04B41/88;H01B3/12;H01B17/60;H01L21/48;H01L23/15;H01P11/00;H05K1/03 主分类号 H01P3/08
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