SEMICONDUCTOR DEVICE

摘要

PURPOSE:To manufacture the semiconductor device with small element space and high static electricity breakdown strength by a method wherein two kinds of insulating oxide films are utilized. CONSTITUTION:A base layer 34 is diffused on a collector layer 32 of Si substrate from window of SiO2 films 42 formed by means of selective oxidation. Next the second SiO2 films 37 are formed in the windows of SiO2 films 42 to be provided with the windows to diffuse emitter layer 36. Consequently the distance between the junctions 44 and 45 may be increased at the interface of said SiO2 films improving the static electricity breakdown strength. Besides, the distance between the windows of said films 37 and 42 may be decreased down to 1/2 (limit) of the thickness of said films 37 reducing the element space.