| 摘要 |
PURPOSE:To provide a semiconductor device excellent in both integration degree and performance as well as to provide a structure effective in realization of a three-dimensional semiconductor device, by leading out electrodes from both sides of a semiconductor active layer. CONSTITUTION:In a semiconductor integrated circuit device having such a structure that a signal is made to enter a semiconductor substrate from an upper electrode 10 and drawn out from a lower electrode 11, a reference numeral 12 designates an active element, and a numeral 31 denotes an isolating layer. In case of applying this structure to a bipolar IC, in which reference numerals 13a, 13b designate emitter electrodes, while numrals 14a, 14b denote base electrodes, the signal entering through the base electrode 14a controls the current flowing between an emitter 23a and a collector 25a, and when the base potential rises a current flows from a supply line 15 to the emitter electrode 13a. Since there is no inactive region, the transistor can be made smaller. In addition, since there is no excessive series resistance, the transistor can operate at higher speed. |
