| 摘要 |
PURPOSE:To contrive to reduce a junction leakage current, and to reduce noise of the element by a method wherein silicon is introduced into an impurity region before the impurity region forming process or after the process, and a heat treatment is performed. CONSTITUTION:An N type epitaxial layer 11 to form a collector region 14 thereis formed on an N<+> type semiconductor substrate 10. An oxide film 12 is formed on the surface of the N type epitaxial layer 11, and a window 12a is opened in the oxide film 12 thereof on the base region formation programing region in the N type epitaxial layer 11. Boron ions are implanted to form the base region 13 using the oxide film 12 thereof as the mask. Silicon is introduced in the base region 13 using the oxide film 12 thereof as the mask. After the oxide film 12 is removed, an oxide film 15 is formed newly. A window 16 is opened in the region corresponding to an emitter formation programming region in the base region 13. The emitter region 17 is formed using the oxide film 15 as the mask, and silicon is implanted. Contact holes to lead to the base region 13 are opened in the oxide film 15, and lead out electrodes 18, 19 are formed. |
