| 摘要 |
<p>A semiconductor device having low resistance connection to a portion thereof carrying substantial current. First and second electrodes 34,32 are provided on a major surface of the semiconductor 12, the first electrode 34 providing lateral contact to a wire bond from e.g. a base 18 of a transistor; the second electrode 32 providing low resistance vertical contact from the high current carrying region eg. emitter 20. A conductive plate 43 is supported between upstanding spaced apart portions of the second electrode 32 and is thereby vertically spaced apart from the first electrode 34, which electrodes are further protected by dielectric layer 36. Electrode 32 includes layers of metal (32-40) and a solder blob 42. <IMAGE></p> |
