发明名称 |
PROCESS FOR PRODUCING A DOUBLE LAYER WITH HETERO-JUNCTION FOR THE MEMORY ELECTRODE OF AN IMAGE REGISTRATION DEVICE |
摘要 |
A double layer having a hetero-junction interface for a storage electrode of an electro-optical camera device is produced by vacuum vapor deposition of n-conductive cadmium selenide or cadmium sulfo-selenide onto a n+-conductive signal electrode layer comprised of tin oxide. The cadmium material to be vapor deposited is admixed with a small amount of a glass additive, such as boron oxide, the admixture sintered in vacuum and thereafter the cadmium material is vapor-deposited onto the signal electrode without spattering. The resultant hetero-junction is substantially free of metallic cadmium and such double layer is particularly useful in a Vidicon target. |
申请公布号 |
EP0031095(A3) |
申请公布日期 |
1982.04.28 |
申请号 |
EP19800107832 |
申请日期 |
1980.12.11 |
申请人 |
HEIMANN GMBH |
发明人 |
HEIMANN, BERND, DR., DIPL.-PHYS. |
分类号 |
H01L31/04;G03G5/08;H01J9/233;H01J29/36;H01J29/45;H01L21/203;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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