| 摘要 |
PURPOSE:To obtain the MOS inverter having high speed operation by forming a reverse conductivity type layer of low impurity density as an island on a one-conductivity type semiconductor substrate, forming MOS transistors for load and driver thereat, and applying predetermined polarity bias voltage to the substrate with the source as a reference potential. CONSTITUTION:A P<-> type layer 2 is epitaxially grown on an N<-> type Si substrate 1, the peripheral edge is removed, a thick SiO2 film 3 is buried therein, and the layer 2 is isolated in an isoland state. Then, N<+> type source and drain regions 41-43 are diffused in the layer 2, a gate electrode 61 is formed through a gate insulating film 51 on the exposed layer 2 between the regions 41 and 42, and a gate electrode 62 is formed through a gate insulating film 52 between the regions 42 and 43. Thus, N-channel load and driver MOS transistors Q1, Q2 are formed, the region 43 are grounded, the regions 42 and the electrode 61 are connected, the region 41 and the electrode 62 are connected, positive bias voltage VDD are applied to the substrate 1, and the depletion layer in the layer 2 is controlled. |
