| 摘要 |
PURPOSE:To increase the sensitivity and to prevent the diminution of a film without impairing the resolution of a positive resist, by stacking a negative resist on a quinone-diazo series positive resist, exposing the resist to an electron beam, and developing the resist. CONSTITUTION:The quinone-diazo series positive resist 2 is applied on a substrate 1, and the negative resist 3 is stacked thereon. A speficied pattern 3' is exposed to an electron beam 4. If required, a ultraviolet ray 5 is irradiated all over the surface, and the resist 2 is fully sensitized. Since the resist 3 is not sensitized to the ultraviolet ray, it is not changed. The film 3 is developed and a film 3' is obtained. The film 2 is developed with the film 3' as a mask, and a film 2' is obtained. Since the upper surface of the film 2' is covered by the film 3', the film is not diminished. Therefore, amount of irradiation of the electron beam can be greatly decreased, irradiation time is greatly shortened, working efficiency is improved, fogging is not generated, and the resolution is not impaired. |
