发明名称 |
METHOD FOR TITAN-GERMANIUM CONTACT LAYER CREATION |
摘要 |
FIELD: electronics. ^ SUBSTANCE: invention is attributed to microelectronics and can be used in production of semiconductor devices and integral circuits. Essence of invention: in the method of attaching silicon chip to chip holder, chip seating surface is successively sputtered with two titan-germanium metals, and chip to chip holder soldering is carried out at temperature of 280-300°C. ^ EFFECT: improvement of chip with chip-holder contact reliability and stability of attachment process. |
申请公布号 |
RU2343586(C1) |
申请公布日期 |
2009.01.10 |
申请号 |
RU20070127165 |
申请日期 |
2007.07.16 |
申请人 |
GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) |
发明人 |
ISMAILOV TAGIR ABDURASHIDOVICH;SHAKHMAEVA AJSHAT RASULOVNA;SHANGEREEVA BIJKE ALIEVNA |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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