发明名称 METHOD FOR TITAN-GERMANIUM CONTACT LAYER CREATION
摘要 FIELD: electronics. ^ SUBSTANCE: invention is attributed to microelectronics and can be used in production of semiconductor devices and integral circuits. Essence of invention: in the method of attaching silicon chip to chip holder, chip seating surface is successively sputtered with two titan-germanium metals, and chip to chip holder soldering is carried out at temperature of 280-300°C. ^ EFFECT: improvement of chip with chip-holder contact reliability and stability of attachment process.
申请公布号 RU2343586(C1) 申请公布日期 2009.01.10
申请号 RU20070127165 申请日期 2007.07.16
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) 发明人 ISMAILOV TAGIR ABDURASHIDOVICH;SHAKHMAEVA AJSHAT RASULOVNA;SHANGEREEVA BIJKE ALIEVNA
分类号 H01L21/283 主分类号 H01L21/283
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