| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that suppresses formation of a void in a solder junction through a temperature control of a soldering stage. SOLUTION: The manufacturing method of the semiconductor device includes: a first soldering stage of performing with solder 12 below an element between a semiconductor element 11 and an insulating substrate 13; and a stage of performing with solder 14 below a substrate between the insulating substrate 13 and a heat sink 15. The solder 12 below the element and the solder 14 below the substrate are Sn solder made of tin. An electrode portion 20 having a contact layer 21 and an oxide preventive layer 23 with an electrode layer 22 interposed therebetween is formed on the semiconductor element 11 and while heating is carried out in the first soldering stage at temperature where an alloy layer 25 of tin of the solder 12 below the element and a material constituting the electrode layer 22 is formed, heating is performed in the first soldering stage and second soldering stage at temperature where the alloy layer 25 is not separated in the solder 12 below the element. COPYRIGHT: (C)2009,JPO&INPIT |
