发明名称 |
Power semiconductor module with pressure contacted power semiconductor element for current rectifiers |
摘要 |
<p>The module has at least one power semiconductor element pressure contacted on a base plate (1) with electric separation by an insulating disc, and is conductively coupled with associated contact faces by couplers, while being enclosed in a housing (3,9). The base plate and the housing are tightly connected by a two-side adhesive, flexible plastics foil (202). At least one power semiconductor element is insulatingly pressure contacted with a contact rail (205) and coupling conductor (53) by expansion screws (210). There is an alterative contacting of gate terminals (207).</p> |
申请公布号 |
DE19651632(A1) |
申请公布日期 |
1998.06.18 |
申请号 |
DE1996151632 |
申请日期 |
1996.12.12 |
申请人 |
SEMIKRON ELEKTRONIK GMBH, 90431 NUERNBERG, DE |
发明人 |
LOEWER, DIETER, 91126 SCHWABACH, DE |
分类号 |
H01L23/48;H01L25/07;(IPC1-7):H01L23/051;H01L23/10;H05K5/00;H05K7/00 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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