发明名称 Power semiconductor module with pressure contacted power semiconductor element for current rectifiers
摘要 <p>The module has at least one power semiconductor element pressure contacted on a base plate (1) with electric separation by an insulating disc, and is conductively coupled with associated contact faces by couplers, while being enclosed in a housing (3,9). The base plate and the housing are tightly connected by a two-side adhesive, flexible plastics foil (202). At least one power semiconductor element is insulatingly pressure contacted with a contact rail (205) and coupling conductor (53) by expansion screws (210). There is an alterative contacting of gate terminals (207).</p>
申请公布号 DE19651632(A1) 申请公布日期 1998.06.18
申请号 DE1996151632 申请日期 1996.12.12
申请人 SEMIKRON ELEKTRONIK GMBH, 90431 NUERNBERG, DE 发明人 LOEWER, DIETER, 91126 SCHWABACH, DE
分类号 H01L23/48;H01L25/07;(IPC1-7):H01L23/051;H01L23/10;H05K5/00;H05K7/00 主分类号 H01L23/48
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