| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrict oxidation of Al by a stripe side face in an organic metal vapor-phase growth method or a molecular beam epitaxial growth by a method, wherein a mesa-stripe pat contains Al in one of the layers and its active region and a side face in the vicinity thereof have a predetermined crystal plane direction. SOLUTION: In a structure of this semiconductor laser element, a buffer layer 302, a first conductivity-type semiconductor lower clad layer 303, an active region 305, and a second conductivity-type semiconductor upper clad layer 307 are laminated on the surface of a semiconductor substrate 301. This layer structure has a mesa-stripe shape that the center is constricted, and a side face of the active region 305 and a side face near the active region 305 are positioned under the constricted part, and also the side face has a crystal face direction comprising (1 mn) B face (l, m, n is each an integer not containing 0), and both sides of the stripe are embedded with first and second conductive semiconductor current block layers 309, 310. Additionally, a mixed crystal ratio of Al of all of the upper clad layer 307, the active region 305, and the lower clad layer 303 is set at 0.3 to smaller.</p> |
