| 摘要 |
PURPOSE:To improve photoelectric conversion characteristics by leading out a photoelectric conversion output from a first electrode on the light-receiving surface side and a second electrode under the state in which bias voltage is applied between a third electrode formed onto a light-transmitting insulating film and the second electrode on its back side. CONSTITUTION:When bias voltage is applied to a third electrode 6 on the light- receiving surface side and a second electrode 4 on the back side, an electric field promoting the migration of photo-carriers is generated in an amorphous semiconductor film 2. Since the intensity of the electric field depends upon bias voltage, the current collection rate of photo-carriers is also increased with the elevation of bias voltage. The bias voltage generates only the electric field and has extremely small power consumption, and the electromotive voltage of other generating sections of the same substrate 1 does not depend upon an area and is kept at an approximately fixed value even when structure in which bias voltage is applied from the generating sections is shaped, thus resulting in satisfaction by the small area. Since there is no impurity layer on the light-receiving surface side, beams on the short wavelength side also reach to a generating layer 2i directly. Accordingly, photoelectric conversion characteristics are improved. |
