发明名称 TRAP SYSTEM AND SEMICONDUCTOR DEPOSITION DEVICE USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To enable separation and capture of each of a plurality of decomposition products from an exhaust gas, by providing a trap for capturing decomposition products of a material gas from an exhaust gas after reaction, with respect to each of at least two types of gases. SOLUTION: In the case where arsenic and phosphorus are used as material gases, an exhaust gas of the material gases which contributed to growth in a reactor 1 is fed together with carrier gases such as nitrogen and hydrogen into an arsenic trap 3 as a first trap through an exhaust pipe 2. The arsenic trap 3 is held at approximately 50 deg.C, for example. A dust removing filter 4 is arranged after the arsenic trap 3, thus restraining blocking in a pipe arrangement, such as a gate valve 5 and an air operating valve 6 on the subsequent stage. On the subsequent stage of a butterfly valve 7 for pressure control provided on the subsequent stage of the valves 5, 6, a phosphorus trap 8 as a second trap is provided. The phosphorus trap 8 may be cooled to approximately 5 deg.C, for example.</p>
申请公布号 JPH1092751(A) 申请公布日期 1998.04.10
申请号 JP19960246550 申请日期 1996.09.18
申请人 SONY CORP 发明人 ISHIKAWA HIDETO
分类号 B01D53/34;B01D8/00;C23C16/44;C30B25/14;C30B29/42;H01L21/205;(IPC1-7):H01L21/205 主分类号 B01D53/34
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