发明名称 Process of controlling grain growth in metal films
摘要 A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.
申请公布号 SG76616(A1) 申请公布日期 2000.11.21
申请号 SG19990002432 申请日期 1999.05.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KAJA SURYANARAYANA;PERFECTO FRED;GOLDSMITH CHARLES;DEHAVEN PATRICK;LEGERE MICHELE;HURD JEFFERY
分类号 H01L21/28;C25D5/50;C25D7/00;H01L21/288;H01L21/3205;H01L23/52;H05K1/09;H05K3/22;(IPC1-7):H01L27/01 主分类号 H01L21/28
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