发明名称 CHARGE PUMP CIRCUIT
摘要 A charge pump circuit includes a sub-circuit, which is a pumping stage circuit or an output stage circuit. The sub-circuit includes an input terminal, an output terminal, a transistor, a first capacitive device, a first diode device, and a second diode device. The transistor has a first source/drain (S/D) terminal coupled with the input terminal, a second S/D terminal coupled with the output terminal, and a gate terminal. The first capacitive device has a first end coupled with the gate terminal of the transistor and a second end configured to receive a first driving signal. The first diode device has a cathode coupled with the second S/D terminal of the transistor and an anode coupled with the gate terminal of the transistor. The second diode device has a cathode coupled with the gate terminal of the transistor and an anode coupled with the second S/D terminal of the transistor.
申请公布号 US2016164403(A1) 申请公布日期 2016.06.09
申请号 US201514956061 申请日期 2015.12.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 ROTH Alan;SOENEN Eric
分类号 H02M3/07 主分类号 H02M3/07
代理机构 代理人
主权项 1. A charge pump circuit, comprising: a sub-circuit being a pumping stage circuit or an output stage circuit, the sub-circuit comprising: an input terminal;an output terminal;a transistor having a first source/drain (S/D) terminal coupled with the input terminal, a second S/D terminal coupled with the output terminal, and a gate terminal;a first capacitive device having a first end coupled with the gate terminal of the transistor and a second end configured to receive a first driving signal;a first diode device having a cathode coupled with the second S/D terminal of the transistor and an anode coupled with the gate terminal of the transistor; anda second diode device having a cathode coupled with the gate terminal of the transistor and an anode coupled with the second S/D terminal of the transistor.
地址 Hsinchu TW