| 摘要 |
<p>PROBLEM TO BE SOLVED: To planarize the surface of a bump electrode. SOLUTION: A semiconductor device, where a gold bump electrode 57 is formed on a pad 53 formed above a semiconductor substrate, comprises the pad 53 consisting of a plurality of openings provided in a passivation film 52 covering a pad forming region, a conductive film 55 that is buried in the openings to constitute the pad 53, and the gold bump electrode 57 that comes into contact with the pad 53 via the conductive film 55.</p> |
