发明名称 PRODUCTION METHOD FOR COMPOUND SEMICONDUCTOR SUPERFINE PARTICULATE
摘要 PROBLEM TO BE SOLVED: To provide a method for mass-producing a semiconductor particulate while suppressing, in advance, an unfavorable reaction before the semiconductor raw material is charged into a reaction vessel. SOLUTION: This method is characterized in that a compound semiconductor superfine particulate is produced by a hot soap process while independently feeding a raw material including the elements of the 11th to 13th group in the periodic table and that including the elements of the 15th to 17th group into a tubular flow reactor. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003160336(A) 申请公布日期 2003.06.03
申请号 JP20010357005 申请日期 2001.11.22
申请人 MITSUBISHI CHEMICALS CORP 发明人 SAIDA SOICHIRO
分类号 C01G11/02;C09K11/08;(IPC1-7):C01G11/02 主分类号 C01G11/02
代理机构 代理人
主权项
地址