MANUFACTURING METHOD OF CHARGE TRANSFER DEVICE

摘要

forming a n-type BCCD region(2), a first insulating film and a first polysilicone(4) on a p-type silicone substrate(1); forming a number of first transmission electrode(13) having a first impurity doping region(10) at a constant interval by removing the first polysilicone(4) and the first insulating film selectively; forming a second insulating film on the entire surface and forming a barrier(9) on the surface of the BCCD region(2) using the first transmission electrode(13) as a mask; depositing a second polysilicone(6) and forming a second impurity doping region(11) at a constant interval; forming a number of second transmission electrode(14) having the second impurity doping region(11) by removing the second polysilicone(6) selectively; and depositing a third insulator and wiring to apply clock signal to the doping regions(10,11) of the first and the second transmission electrode(13,14).