| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with few holes stored when a reflow current flows to an FWD cell region and few holes intruding an IGBT cell region. SOLUTION: The respective FWD cell regions (FWD active regions) 3 constituting one of cell region columns disposed on both sides of center gate wiring 4a running at the center of the semiconductor device 1 pass through the lower part of the gate wiring 4 and are integrally formed with the respective FWD cell regions 3 constituting the other cell region column. Thus, the holes stored in a region where a gate wiring region, an IGBT active region and the FWD active region cross are absorbed to the FWD cell region (FWD active region) 3. COPYRIGHT: (C)2009,JPO&INPIT
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