| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-resistive material including new impurity-doped gallium nitride.SOLUTION: A high resistive material of according to the invention consists of manganese-doped gallium nitride crystal (Mn doped GaN), of which resistivity measured by Hall measurement is 100 &OHgr;/cm or higher. This high-resistive material is suitable for high-frequency device because of the high resistivity thereof. In the high-resistive material, manganese doped amount is preferably 1×10atoms/cmor higher. This high-resistive material is preferably produced with a flux method. The flux method is one of the liquid-phase methods, and for gallium nitride, compared with a gas phase method, temperatures and pressures necessary for growing the gallium nitride may be eased by using metallic sodium. |
