Method for depositing films on semiconductor wafers

摘要

An exemplary embodiment of the present invention provides a method of depositing of a film on semiconductor wafers. In a first step, a film thickness of 3 um or less is deposited on wafers accommodated in a wafer boat in a vertical furnace at a deposition temperature of the furnace while a deposition gas is flowing. During the first step, the temperature may be held substantially constant. In a second step, a temperature deviation or variation of at least 50° C. from the deposition temperature of the first step is applied and the furnace temperature is returned to the deposition temperature of the first step while the flow of the deposition gas is stopped. The first and second steps are repeated until a desired final film thickness is deposited.

主权项

1. A method of depositing of a film on semiconductor wafers, comprising performing the following steps:
(a) loading a plurality of semiconductor wafers in a wafer boat; (b) inserting the wafer boat into a furnace; (c) depositing a film to have a thickness from 1.5 um to 4 um on the plurality of semiconductor wafers while applying a deposition gas to the plurality of semiconductor wafers at a substantial constant first temperature of the furnace; (d) applying a temperature deviation from the first temperature to the furnace while the application of the deposition gas to the plurality of semiconductor wafers is stopped; (e) restoring the furnace to the first temperature; and, (f) repeating step (c).