| 摘要 |
PURPOSE:To manufacture an X-ray mask having an X-ray absorber made of a tungsten film having a suitable stress with satisfactory reproducibility by forming a B-phase tungsten film, then heat treating it to convert the B-phase to an alpha-phase as an X-ray absorber, and then forming a pattern of its tungsten film. CONSTITUTION:After a B-phase tungsten film 3 is formed on an X-ray transmis sion layer 2 provided on a substrate 1, it is heat treated to convert the film 3 from the B-phase to an alpha-phase as an X-ray absorber 4, a pattern 6 of the tungsten film 3, and the rear face of the substrate 1 is etched. For example, a silicon nitride film is formed on a Si wafer substrate 1 as an X-ray transmis sion layer 2, a B-phase tungsten film 3 is then formed, and heat treated at 350 deg.C to phase-convert it to an alpha-phase tungsten film 4. Then, it is coated with an electron beam resist 5, exposed with an electron beam, then developed to form a desired pattern, the film 4 is etched by reactive ion etching to obtain a tungsten film pattern 6 of an X-ray absorber. |
