发明名称 PHOTOLITHOGRAPHIC METHODS
摘要 Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
申请公布号 US2016041467(A1) 申请公布日期 2016.02.11
申请号 US201514826344 申请日期 2015.08.14
申请人 Rohm and Haas Electronic Materials LLC 发明人 Bae Young Cheol;Bell Rosemary;Park Jong Keun;Lee Seung-Hyun
分类号 G03F7/11;G03F7/20;G03F7/32;G03F7/16 主分类号 G03F7/11
代理机构 代理人
主权项 1. A method of forming an electronic device, comprising: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a basic quencher, a polymer and an organic solvent; (d) baking the photoresist overcoat composition to form a layer having a water receding contact angle of from 70 to 85°; (e) exposing the photoresist layer to actinic radiation; and (f) developing the exposed photoresist layer with an organic solvent developer.
地址 Marlborough MA US