发明名称 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
摘要 Semiconductor devices and methods of manufacturing semiconductor devices. One example of a method of fabricating a semiconductor device comprises forming a conductive feature extending through a semiconductor substrate such that the conductive feature has a first end and a second end opposite the first end, and wherein the second end projects outwardly from a surface of the substrate. The method can further include forming a dielectric layer over the surface of the substrate and the second end of the conductive feature such that the dielectric layer has an original thickness. The method can also include removing a portion of the dielectric layer to an intermediate depth less than the original thickness such that at least a portion of the second end of the conductive feature is exposed.
申请公布号 US2016013134(A1) 申请公布日期 2016.01.14
申请号 US201514733330 申请日期 2015.06.08
申请人 Micron Technology, Inc. 发明人 Pratt David S.
分类号 H01L23/538;H01L23/00;H01L25/065;H01L23/31;H01L23/29 主分类号 H01L23/538
代理机构 代理人
主权项
地址 Boise ID US
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