NONVOLATILE MEMORY INCLUDING MEMORY CELL ARRAY OF THREE-DIMENSIONAL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory including a memory cell array of a three-dimensional structure having an improved operation speed.SOLUTION: The nonvolatile memory includes: channel layers and insulation layers alternately laminated on a substrate; conductive substances extending from the channel layers and the insulation layers to a part adjacent to the substrate in a perpendicular direction to the substrate between the channel films of channel layers; information storage films constituted between the channel films of the channel layers and the conductive substances; and bit lines respectively connected to the channel layers. The conductive substances form a plurality of groups, and each distance between the plurality of groups is larger than a distance between the conductive substances in each group.