发明名称 |
Field effect transistor switching circuit |
摘要 |
Embodiments include an apparatus, system, and method related to a switching circuit. In some embodiments, the switching circuit may include first switch including an n-channel field effect transistor (FET) in the signal path. The switching circuit may further include a second switch in shunt to the first switch. The second switch may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed. |
申请公布号 |
US9379698(B2) |
申请公布日期 |
2016.06.28 |
申请号 |
US201414172727 |
申请日期 |
2014.02.04 |
申请人 |
TriQuint Semiconductor, Inc. |
发明人 |
Nohra George |
分类号 |
H03K17/30;H03K17/16;H03K17/687 |
主分类号 |
H03K17/30 |
代理机构 |
Withrow & Terranova, P.L.L.C. |
代理人 |
Withrow & Terranova, P.L.L.C. |
主权项 |
1. A switching circuit comprising:
a first transistor having a first gate contact, a first drain contact, a first source contact, and a body contact; a second transistor having a second gate contact, a second drain contact coupled to the first gate contact, and a second source contact coupled to the body contact; and a first resistor and a second resistor coupled in series between the first drain contact and the first source contact, and wherein the second gate contact is coupled to the first resistor and the second resistor at a node between the first resistor and the second resistor. |
地址 |
Hillsboro OR US |