INTER-LEVEL CONNECTION FOR MULTI-LAYER STRUCTURES

摘要

Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer, the first device layer being formed on a substrate. The second device layer includes a second conductive layer, the second device layer being formed on the first device layer. The inter-level connection structure includes one or more conductive materials and configured to electrically connect to the first conductive layer and the second conductive layer, the inter-level connection structure penetrating at least part of the first dielectric layer. The first conductive layer is configured to electrically connect to a first electrode structure of a first semiconductor device within the first device layer.

主权项

1. A semiconductor device structure comprising:
a substrate; a first device layer including a first conductive layer and a first dielectric layer formed on the first conductive layer, the first device layer being formed on the substrate; a second device layer including a second conductive layer, the second device layer being formed on the first device layer; and a first inter-level connection structure including one or more conductive materials and configured to electrically connect to the first conductive layer and the second conductive layer, the first inter-level connection structure penetrating at least part of the first dielectric layer; wherein the first conductive layer is configured to electrically connect to a first electrode structure of a first semiconductor device within the first device layer.