发明名称 METHOD FOR FORMING METAL WIRING LAYER, DEVICE FOR FORMING METAL WIRING LAYER, AND STORAGE MEDIUM
摘要 [Problem] To allow formation of a metal wiring layer inside a recessed part of a substrate without the metal wiring layer inside the recessed part being formed outward of the recessed part. [Solution] A method for forming a metal wiring layer provided with a step for forming a catalyst layer (5) composed of Pd on a tungsten layer (W) disposed on the bottom surface (3a) of a recessed part (3) of a substrate (2) without formation of the catalyst layer (5) on the surface (3b) of an insulating layer of the recessed part(3), and a step for forming an Ni-based metal wiring layer (7) on the catalyst layer (5) of the recessed part (3).
申请公布号 WO2015056678(A1) 申请公布日期 2015.04.23
申请号 WO2014JP77355 申请日期 2014.10.14
申请人 TOKYO ELECTRON LIMITED 发明人 TANAKA TAKASHI;MIZUTANI NOBUTAKA;IWASHITA MITSUAKI
分类号 H01L21/288;C23C18/18;C23C18/32;H01L21/768;H01L23/522 主分类号 H01L21/288
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