发明名称 |
METHOD FOR FORMING METAL WIRING LAYER, DEVICE FOR FORMING METAL WIRING LAYER, AND STORAGE MEDIUM |
摘要 |
[Problem] To allow formation of a metal wiring layer inside a recessed part of a substrate without the metal wiring layer inside the recessed part being formed outward of the recessed part. [Solution] A method for forming a metal wiring layer provided with a step for forming a catalyst layer (5) composed of Pd on a tungsten layer (W) disposed on the bottom surface (3a) of a recessed part (3) of a substrate (2) without formation of the catalyst layer (5) on the surface (3b) of an insulating layer of the recessed part(3), and a step for forming an Ni-based metal wiring layer (7) on the catalyst layer (5) of the recessed part (3). |
申请公布号 |
WO2015056678(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
WO2014JP77355 |
申请日期 |
2014.10.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TANAKA TAKASHI;MIZUTANI NOBUTAKA;IWASHITA MITSUAKI |
分类号 |
H01L21/288;C23C18/18;C23C18/32;H01L21/768;H01L23/522 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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