| 发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A non-volatile memory device includes a gate electrode, a data storage layer provided on the gate electrode, and a source electrode and a drain electrode provided on the data storage layer and spaced apart from each other. The data storage layer comprises three layers that form hetero-interfaces and have different permittivities from one another. |
| 申请公布号 |
US2015097170(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201414487961 |
申请日期 |
2014.09.16 |
| 申请人 |
KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
Kim Youngkyoo;Nam Sungho;Kim Hwajeong;Seo Jooyeok;Park Soohyeong |
| 分类号 |
H01L51/05;H01L51/00 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device comprising:
a gate electrode; a data storage layer provided on the gate electrode; and a source electrode and a drain electrode provided on the data storage layer and spaced apart from each other, wherein the data storage layer comprises three layers which form hetero-interfaces and have different permittivities from one another. |
| 地址 |
Daegu KR |
