发明名称 |
NEGATIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND BATTERY PACK |
摘要 |
A negative electrode for nonaqueous electrolyte secondary battery of an embodiment includes a current collector, and a negative electrode mixture layer arranged on the current collector. The negative electrode mixture layer includes a negative electrode active material, a conductive material, and a binder. The negative electrode active material is composite particles including a carbonaceous substance, a silicon oxide phase in the carbonaceous substance, and a silicon phase including crystalline silicon in the silicon oxide phase. The negative electrode active material satisfies d1/d0≧0.9 where an average thickness of the mixture layer is d0, and a maximum thickness of a single particle of the composite particles in a vertical direction, the particle occupying the mixture layer, to a surface of the current collector is d1. |
申请公布号 |
US2015086873(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201414478125 |
申请日期 |
2014.09.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HOTTA Yasuyuki;KUBOKI Takashi;MORITA Tomokazu;FUKASAWA Takayuki;ESSAKI Kenji;OSADA Norikazu |
分类号 |
H01M4/36;H01M10/052;H01M4/70 |
主分类号 |
H01M4/36 |
代理机构 |
|
代理人 |
|
主权项 |
1. A negative electrode for nonaqueous electrolyte secondary battery, the negative electrode comprising:
a current collector; and a negative electrode mixture layer arranged on the current collector, and including a negative electrode active material, a conductive material, and a binder, wherein the negative electrode active material is composite particles including a carbonaceous substance, a silicon oxide phase in the carbonaceous substance, and a silicon phase including crystalline silicon in the silicon oxide phase, and the negative electrode active material satisfies d1/d0≧0.9 where an average thickness of the mixture layer is d0, and a maximum thickness of a single particle of the composite particles in a vertical direction, the particle occupying the mixture layer, to a surface of the current collector is d1. |
地址 |
Tokyo JP |