METHOD OF FORMING STRAIN-RELAXED BUFFER LAYERS

摘要

Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant. Strain relaxation typically involves forming a strain relaxed buffer layer on the semiconductor substrate for further growth of another semiconductor material on top. Whereas conventionally formed buffer layers are often thick, rough and/or defective, the strain relaxed buffer layers formed using the implementations described herein demonstrate improved surface morphology with minimal defects.

主权项

1. A method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate, comprising:
epitaxially depositing a buffer layer on a substrate; epitaxially depositing a silicon containing capping layer on the buffer layer; and annealing the buffer layer and silicon containing capping layer to relax the buffer layer.