| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask capable of suppressing a resolution failure with respect to a wafer by suppressing the deterioration of a light-shielding film to caused by use in exposure in a photolithography, and to provide a method for manufacturing the photomask. <P>SOLUTION: The photomask has a light-shielding film on a surface of a glass substrate where the surface of a metal film that forms a light-shielding portion is passivated. The passivation is preferably carried out by oxidation processing. For example, either HNO<SB>3</SB>processing or ozone water processing is suitable. By forming an oxide film by the passivation processing on the surface of the metal light-shielding film, a change of the metal film into CrO<SB>3</SB>caused by the influences of ozone generated from ArF and of ArF energy can be prevented, thus suppressing the deterioration of the light-shielding film and allowing the stable use of the photomask for a longer period of time. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
