| 发明名称 | Method for manufacturing semiconductor device | ||
| 摘要 | When forming a conductive film by a method comprising sputtering after grinding the back surface of a semiconductor substrate, in order to avoid discharge from a part of an adhesive flown out at the outer periphery of the substrate, wherein the adhesive is used to fix the substrate to a support during grinding, at least the substrate end or the adhesive is removed after grinding the semiconductor substrate and before forming the conductive film, so that a gap between the substrate end and the adhesive may have a predetermined size. | ||
| 申请公布号 | US8853005(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US201113227518 | 申请日期 | 2011.09.08 |
| 申请人 | PS4 Luxco S.a.r.l. | 发明人 | Fujii Seiya |
| 分类号 | H01L21/00;H01L21/30;H01L21/44;H01L21/768;H01L23/48 | 主分类号 | H01L21/00 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A method for manufacturing a semiconductor device comprising: fixing a semiconductor substrate to a support having an external diameter greater than that of the semiconductor substrate by use of an adhesive; and forming a conductive film on the semiconductor substrate by a method comprising at least sputtering after fixing the semiconductor substrate to the support; wherein before forming the conductive film, a gap between the semiconductor substrate and the adhesive flown out from the outer periphery of the semiconductor substrate is enlarged to a predetermined size by removing at least one of the semiconductor substrate and the adhesive. | ||
| 地址 | Luxembourg LU | ||