| 摘要 |
The present technique provides a semiconductor device and a method for manufacturing the same. After a substrate is etched to form a through silicon via (TSV), polysilicon is deposited on the inner part of a via hole. An insulating layer is deposited on the upper part of the polysilicon. The polysilicon is connected to the insulating layer in series, thereby reducing capacitance. As the polysilicon is formed in a region which touches silicon, the polysilicon prevents the contamination of the silicon (Si) when a copper material is diffused into the insulating layer. |
