发明名称 Generating a Highly Ionized Plasma in a Plasma Chamber
摘要 A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.
申请公布号 US2014174909(A1) 申请公布日期 2014.06.26
申请号 US201314138400 申请日期 2013.12.23
申请人 TRUMPF Huettinger Sp. z.o.o. 发明人 Klimczak Andrzej;Ozimek Pawel;Bugyi Rafal
分类号 C23C14/46;H01J37/34 主分类号 C23C14/46
代理机构 代理人
主权项
地址 Zielonka PL