RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR CONTROLLING MANUFACTURING OF CORRESPONDING SUB-RESOLUTION FEATURES OF CONDUCTIVE AND RESISTIVE ELEMENTS

摘要

A method including: forming a stack of resistive layers; prior to or subsequent to forming the stack of resistive layers, forming a conductive layer; applying a mask layer on the stack of resistive layers or the conductive layer; forming a first spacer on the mask layer; and etching away a first portion of the mask layer using the first spacer as a first mask to provide a remainder. The method further includes: forming a second spacer on the stack of the resistive layers or the conductive layer and the remainder of the mask layer; etching away a second portion of the remainder of the mask layer to form an island; and using the island as a second mask, etching the stack of the resistive layers to form a resistive element of a memory, and etching the conductive layer to form a conductive element of the memory.

主权项

1. A method comprising:
forming a stack of resistive layers; prior to or subsequent to forming the stack of resistive layers, forming a conductive layer; applying a mask layer on (i) the stack of resistive layers, or (ii) the conductive layer; forming a first spacer on the mask layer; etching away a first portion of the mask layer using the first spacer as a first mask to provide a remainder; forming a second spacer on (i) the stack of the resistive layers or the conductive layer, and (ii) the remainder of the mask layer; etching away a second portion of the remainder of the mask layer to form an island; and using the island as a second mask, (i) etching the stack of the resistive layers to form a resistive element of a memory, and (ii) etching the conductive layer to form a conductive element of the memory.