| 摘要 |
<p>A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer.</p> |
