发明名称 Metal Bump and Method of Manufacturing Same
摘要 An embodiment bump structure includes a contact element formed on a substrate, a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element an under bump metallurgy (UMB) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width, and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width.
申请公布号 US2014077365(A1) 申请公布日期 2014.03.20
申请号 US201313904885 申请日期 2013.05.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN YEN-LIANG;TSENG YU-JEN;HUANG CHANG-CHIA;KUO TIN-HAO;CHEN CHEN-SHIEN
分类号 H01L23/498;H01L21/768 主分类号 H01L23/498
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